Negative differential resistances with back gate-controlled lowest operation windows in graphene double barrier resonant tunneling diodes

摘要

We theoretically investigate negative differential resistance (NDR) ofmassless and massive Dirac Fermions in double barrier resonant tunneling diodesbased on sufficiently short and wide graphene strips. The current-voltagecharacteristics calculated in a rotated pseudospin space show that, the NDRfeature only presents with appropriate structural parameters for the masslesscase and the peak-to-valley current ratio can be enhanced exponentially by atunable band gap. Remarkably, the lowest NDR operation window is nearlystructure-free and can be almost solely controlled by a back gate, which mayhave potential applications in NDR devices with the operation window as acrucial parameter.